FDP52N20
Manufacturer:
On Semiconductor
Mfr.Part #:
FDP52N20
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 357 W 200 V Continuous Drain Current (ID):52 A 63 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 10.1 mm |
| Width | 4.7 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 49 MΩ |
| Height | 9.4 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 52 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 357 W |
| Power Dissipation | 357 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 2.9 nF |
| Continuous Drain Current (ID) | 52 A |
| Rds On Max | 49 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 53 ns |
| Turn-Off Delay Time | 48 ns |
| Element Configuration | Single |
| Fall Time | 29 ns |
| Rise Time | 175 ns |
| Gate Charge | 63 nC |
| Drain to Source Resistance | 49 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 3 V |
Stock: 4
Distributors
pcbx
pcbxUnit Price$2.40499
Ext.Price$2.40499
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.40499 | $2.40499 |
| 10 | $2.09002 | $20.90020 |
| 25 | $1.82008 | $45.50200 |
| 50 | $1.58501 | $79.25050 |
| 100 | $1.38031 | $138.03100 |
| 300 | $1.33365 | $400.09500 |
| 500 | $1.28855 | $644.27500 |
| 1000 | $1.24878 | $1248.78000 |